横型短チャネルdmos及びその製造方法並びに半導体装置

Horizontal short channel dmos and its manufacturing method and semiconductor device

Abstract

【課題】 ゲート抵抗及びオン抵抗が低く、高速スイッチング特性及び電流駆動特性に優れた横型短チャネルDMOSを提供する。 【解決手段】 N - 型エピタキシャル層110の表面近傍に、P型ウェル114と接しないようにオン抵抗低減用N型ウェル134が形成された横型短チャネルDMOS1Aであって、 P - 型半導体基体106とN - 型エピタキシャル層110との境界に、平面的に見て少なくともP型ウェル114と重なり合う部分に、N - 型エピタキシャル層110より高濃度のN型不純物を含むN型埋め込み層108を、オン抵抗低減用N型ウェル134と接触しないように形成したことを特徴とする横型短チャネルDMOS。 【選択図】 図1
<P>PROBLEM TO BE SOLVED: To provide a horizontal short channel DMOS which is excellent in high speed switching characteristics and current driving characteristics for reducing a gate resistance and an on-resistance. <P>SOLUTION: In this horizontal short channel DMOS1A, an n-type well 134 for on-resistance reduction is formed so as not to be brought into contact with a p-type well 114 in the neighborhood of the surface of an n<SP>-</SP>-type epitaxial layer 110; and an n-type buried layer 108 containing n-type impurity whose concentration is higher than that of the n<SP>-</SP>-type epitaxial layer 110 is formed in a boundary between a p<SP>-</SP>-type semiconductor substrate 106 and the n<SP>-</SP>-type epitaxial layer 110, so as not to be brought into contact with an n-type well 134 for on-resistance reduction at least in a part overlapped with a p-type well 114 when it is flatly viewed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

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